We are conducting research and development on crystal substrates using next-generation semiconductor materials such as SiC, GaN, and diamond. While these materials offer superior performance compared to conventional silicon, they are extremely hard and chemically stable, making it difficult to establish efficient processing technologies. Therefore, we aim to contribute to the practical application of these materials through the development of substrate processing technologies. Regarding diamond, obtaining the large single crystals required for semiconductor devices is challenging. Therefore, we are also focusing on crystal growth technology and working to produce high-quality, large substrates.

Measurement room